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PD- 96154A
IRF7757GPBF
l l l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free
HEXFET(R) Power MOSFET VDSS
20V
RDS(on) max (mW)
35@VGS = 4.5V 40@VGS = 2.5V
ID
4.8A 3.8A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # A2AT !A2AB "A2AT! #A2AB! 'A2A9 &A2A9 %A2A9 $A2A9 & % $
signer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 4.8 3.9 19 1.2 0.76 9.5 12 -55 to + 150
Units
V A W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
105
Units
C/W
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05/14/09
IRF7757GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 20 --- --- --- 0.60 11 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.013 --- --- --- --- --- --- --- --- 15 2.5 4.8 9.5 9.2 36 14 1340 180 132
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 35 VGS = 4.5V, ID = 4.8A m 40 VGS = 2.5V, ID = 3.8A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.8A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 23 ID = 4.8A --- nC VDS = 16V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- R G = 6.2 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 20 10 1.2 A 19 1.2 30 15 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.2A, VGS = 0V TJ = 25C, IF = 1.2A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width 400s; duty cycle 2%.
2
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IRF7757GPBF
1000
VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
100
100
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
10
1
1.5V 20s PULSE WIDTH Tj = 25C
1.5V 20s PULSE WIDTH Tj = 150C
0.1 1 10 100
0.1 0.1 1 10 100
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.8A
ID, Drain-to-Source Current ()
1.5
10.00
T J = 150C
1.0
T J = 25C VDS = 15V 20s PULSE WIDTH
1.5 2.0 2.5 3.0
0.5
1.00
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7757GPBF
10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
5
ID = 4.8A
VGS , Gate-to-Source Voltage (V)
VDS = 16V VDS = 10V
4
C, Capacitance(pF)
Ciss
1000
3
2
Coss Crss
100 1 10 100
1
0
0
4
8
12
16
20
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.00
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10.00
T J = 150C
10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0 1 10 100
1.00
T J = 25C
VGS = 0V 0.10 0.1 0.5 0.9 1.2 1.6 2.0 VSD, Source-toDrain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7757GPBF
5.0
VDS
4.0
RD
V GS RG
ID , Drain Current (A)
D.U.T.
+
3.0
- VDD
VGS
2.0
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
0.0
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJC )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7757GPBF
R DS(on) , Drain-to -Source On Resistance ( )
RDS (on) , Drain-to-Source On Resistance ()
0.05
0.050 VGS = 2.5V 0.040
0.04
ID = 4.8A
0.03
VGS = 4.5V 0.030
0.02 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.020 0 5 10 15 20 ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
VGS
VG
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7757GPBF
1.3
120 110
VGS(th) Gate threshold Voltage (V)
1.1
100 90 80
Power (W)
0.9
70 60 50 40 30
ID = 250A
0.7
0.5
20 10
0.3 -75 -50 -25 0 25 50 75 100 125 150
0 1.00 10.00 100.00 1000.00
T J , Temperature ( C )
Time (sec)
Fig 15. Typical Threshold Voltage Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF7757GPBF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7757GPBF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2009
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